High Speed 1064nm Pulse sensing (Series 4X)

High Speed 1064nm Pulse sensing The 4X series of photodetectors are designed specifically for sensing high speed 1064 nm Nd YAG laser pulses. The detector structure is designed to be fully depleted at 150 volts reverse bias and offers high pulsed and DC responsivity at wavelengths up to 1100 nm coupled with an extremely low capacitance per unit area.

Electrical / Optical Specifications
Characteristics measured at 22°C (±2) ambient, and a reverse bias of 150 volts, unless otherwise stated.

Single Elements

Type No.	Active Area		Responsivity A/W		Dark Current nA		NEP WHz-½ λ = 1064 nm Typ.	Capacitance pF		Risetime ns λ = 1064 nm RL = 50 Ω (Typ.)	Package
	mm2	mm	λ = 1064 nm		Max.	Typ.		Vr=0 V Max.	Vr=150V Max.
	mm2	mm	Min.	Typ.	Max.	Typ.		Vr=0 V Max.	Vr=150V Max.
OSD1-4X	1	1.13 dia	0.35	0.40	50	5	1.2e-13	8	2	12	TO18
OSD5-4X*	5	2.52 dia	0.35	0.40	100	10	1.7e-13	32	4	12	TO5
OSD50-4X	50	7.98 dia	0.35	0.40	500	50	3.9e-13	320	20	12	TO8
OSD100-4X*	100	11.3 dia	0.35	0.40	1000	100	5.5e-13	640	36	12	13

Quadrants (Values given are per element unless otherwise stated)

Type No.	Active Area (Total)			Responsivity A/W λ = 1064 nm		Dark Current nA		NEP WHz-½ λ = 1064 nm Typ.	Capacitance pF		Risetime ns λ = 1064 nm RL = 50 Ω (Typ.)	Crosstalk % λ = 1064 nm		Package
Type No.	mm2	mm	Sep. mm	Min.	Typ.	Max.	Typ.	NEP WHz-½ λ = 1064 nm Typ.	Vr=0 V Max.	Vr=150V Max.	Risetime ns λ = 1064 nm RL = 50 Ω (Typ.)	Max.	Typ.	Package
QD50-4X	50	7.98 dia	0.2	0.35	0.40	150	10	1.7e-13	80	7	12	5	1	10
QD100-4X	100	11.3 dia	0.2	0.35	0.40	300	20	2.5e-13	155	12	12	5	1	12
QD320-4X*	320	20.2 dia	0.2	0.35	0.40	1000	60	4.3e-12	480	30	12	5	1	14

* Supplied with optional guard ring connected

Note: Recommended operating voltage range 0 to 150 volts, for all series 4X Detectors

Highlighted items are Centronic standard products generally available from stock

Due to our policy of continued development, specifications are subject to change without notice.