High Speed Extended IR response

(Series 3T)

3T series photodetectors are specifically designed for high speed, infra-red laser pulse detection. The detector structure designed to be fully depleted at 60 volts reverse bias, uses high resistivity silicon to achieve very low capacitance. The detectors offer high responsivity in the 800-1000 nm range but are equally suited to high speed application at longer wavelengths where maximum absolute responsivity is not as important as speed of response.

Electrical / Optical Specifications
Characteristics measured at 22°C (±2) ambient, and a reverse bias of 60 volts, unless otherwise stated.

Single Elements

Type No.	Active Area		Responsivity A/W		Dark Current		NEP WHz-½ λ = 900 nm Typ.	Capacitance pF		Risetime ns λ = 900 nm RL = 50 Ω (Typ.)	Package
	mm2	mm	λ = 900 nm		Max.	Typ.		Vr=0 V Max.	Vr=60V Max.
	mm2	mm	Min.	Typ.	Max.	Typ.		Vr=0 V Max.	Vr=60V Max.
OSD1-3T	1	1.13 dia	0.54	0.61	10	2	1.0e-13	7	2.5	10	TO18
OSD5-3T	5	2.52 dia	0.54	0.61	30	7	1.6e-13	30	5	10	TO5
OSD15-3T	35	3.8 x 3.8	0.54	0.61	40	10	1.9e-13	90	10	10	TO5
OSD35-3T	35	5.9 x 5.9	0.54	0.61	150	40	4.8e-13	205	22	10	TO8
OSD50-3T	50	7.98 dia	0.54	0.61	200	50	5.9e-13	290	27	10	TO8
OSD60-3T	62	7.9 x 7.9	0.54	0.61	300	50	5.9e-13	350	32	10	TO8
OSD100-3T	100	11.3 dia	0.54	0.61	600	200	8.3e-13	580	52	10	13

Highlighted items are Centronic standard products generally available from stock

Due to our policy of continued development, specifications are subject to change without notice.